Strain-engineered inverse charge-funnelling in layered semiconductors
The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2018
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/b7d7b96b3771424897e253d4f2ef6184 |
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