Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Halide perovskite has been applied for resistive switching memory devices, but there are challenges remained to achieve practical application. By using high-throughput screening based on first-principles calculations, the authors discover that lead-free dimer-Cs3Sb2I9 meets the requirements, which e...

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Autores principales:	Youngjun Park, Seong Hun Kim, Donghwa Lee, Jang-Sik Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/b821005c7ac4464788748b4a042b539e
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spelling	oai:doaj.org-article:b821005c7ac4464788748b4a042b539e2021-12-02T17:47:14ZDesigning zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory10.1038/s41467-021-23871-w2041-1723https://doaj.org/article/b821005c7ac4464788748b4a042b539e2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-23871-whttps://doaj.org/toc/2041-1723Halide perovskite has been applied for resistive switching memory devices, but there are challenges remained to achieve practical application. By using high-throughput screening based on first-principles calculations, the authors discover that lead-free dimer-Cs3Sb2I9 meets the requirements, which exhibits switching speed of 20 ns.Youngjun ParkSeong Hun KimDonghwa LeeJang-Sik LeeNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Youngjun Park Seong Hun Kim Donghwa Lee Jang-Sik Lee Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
description	Halide perovskite has been applied for resistive switching memory devices, but there are challenges remained to achieve practical application. By using high-throughput screening based on first-principles calculations, the authors discover that lead-free dimer-Cs3Sb2I9 meets the requirements, which exhibits switching speed of 20 ns.
format	article
author	Youngjun Park Seong Hun Kim Donghwa Lee Jang-Sik Lee
author_facet	Youngjun Park Seong Hun Kim Donghwa Lee Jang-Sik Lee
author_sort	Youngjun Park
title	Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
title_short	Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
title_full	Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
title_fullStr	Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
title_full_unstemmed	Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
title_sort	designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b821005c7ac4464788748b4a042b539e
work_keys_str_mv	AT youngjunpark designingzerodimensionaldimertypeallinorganicperovskitesforultrafastswitchingmemory AT seonghunkim designingzerodimensionaldimertypeallinorganicperovskitesforultrafastswitchingmemory AT donghwalee designingzerodimensionaldimertypeallinorganicperovskitesforultrafastswitchingmemory AT jangsiklee designingzerodimensionaldimertypeallinorganicperovskitesforultrafastswitchingmemory
_version_	1718379491152101376

Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

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