Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
Halide perovskite has been applied for resistive switching memory devices, but there are challenges remained to achieve practical application. By using high-throughput screening based on first-principles calculations, the authors discover that lead-free dimer-Cs3Sb2I9 meets the requirements, which e...
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Autores principales: | Youngjun Park, Seong Hun Kim, Donghwa Lee, Jang-Sik Lee |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/b821005c7ac4464788748b4a042b539e |
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