The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors

Thin-film transistors based on amorphous oxide semiconductors have promising applications, but their stability is hampered by negative bias illumination stress. Here, a systematic study of lanthanide-doped indium oxide semiconductors reveals that Pr and Tb are most efficient in improving the photost...

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Autores principales:	Penghui He, Hua Xu, Linfeng Lan, Caihao Deng, Yongbo Wu, Yilong Lin, Siting Chen, Chunchun Ding, Xiao Li, Miao Xu, Junbiao Peng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/b86d8a8fc68c495089cc6be2c7db0571
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spelling	oai:doaj.org-article:b86d8a8fc68c495089cc6be2c7db05712021-12-02T18:53:08ZThe effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors10.1038/s43246-021-00193-42662-4443https://doaj.org/article/b86d8a8fc68c495089cc6be2c7db05712021-08-01T00:00:00Zhttps://doi.org/10.1038/s43246-021-00193-4https://doaj.org/toc/2662-4443Thin-film transistors based on amorphous oxide semiconductors have promising applications, but their stability is hampered by negative bias illumination stress. Here, a systematic study of lanthanide-doped indium oxide semiconductors reveals that Pr and Tb are most efficient in improving the photostability of devices.Penghui HeHua XuLinfeng LanCaihao DengYongbo WuYilong LinSiting ChenChunchun DingXiao LiMiao XuJunbiao PengNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Penghui He Hua Xu Linfeng Lan Caihao Deng Yongbo Wu Yilong Lin Siting Chen Chunchun Ding Xiao Li Miao Xu Junbiao Peng The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
description	Thin-film transistors based on amorphous oxide semiconductors have promising applications, but their stability is hampered by negative bias illumination stress. Here, a systematic study of lanthanide-doped indium oxide semiconductors reveals that Pr and Tb are most efficient in improving the photostability of devices.
format	article
author	Penghui He Hua Xu Linfeng Lan Caihao Deng Yongbo Wu Yilong Lin Siting Chen Chunchun Ding Xiao Li Miao Xu Junbiao Peng
author_facet	Penghui He Hua Xu Linfeng Lan Caihao Deng Yongbo Wu Yilong Lin Siting Chen Chunchun Ding Xiao Li Miao Xu Junbiao Peng
author_sort	Penghui He
title	The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
title_short	The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
title_full	The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
title_fullStr	The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
title_full_unstemmed	The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
title_sort	effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b86d8a8fc68c495089cc6be2c7db0571
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The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors

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