The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors

Thin-film transistors based on amorphous oxide semiconductors have promising applications, but their stability is hampered by negative bias illumination stress. Here, a systematic study of lanthanide-doped indium oxide semiconductors reveals that Pr and Tb are most efficient in improving the photost...

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Bibliographic Details
Main Authors: Penghui He, Hua Xu, Linfeng Lan, Caihao Deng, Yongbo Wu, Yilong Lin, Siting Chen, Chunchun Ding, Xiao Li, Miao Xu, Junbiao Peng
Format: article
Language:EN
Published: Nature Portfolio 2021
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Online Access:https://doaj.org/article/b86d8a8fc68c495089cc6be2c7db0571
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