A new electrode design for ambipolar injection in organic semiconductors
One of technological challenges building organic electronics is efficient injection of electrons at metal-semiconductor interfaces compared to that of holes. The authors show an air-stable electrode design with induced gap states, which support Fermi level pinning and thus ambipolar carrier injectio...
Guardado en:
Autores principales: | Thangavel Kanagasekaran, Hidekazu Shimotani, Ryota Shimizu, Taro Hitosugi, Katsumi Tanigaki |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/b89ca5d4d3df4a4eb512c35987dfcb01 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
π-Extended perylene diimide double-heterohelicenes as ambipolar organic semiconductors for broadband circularly polarized light detection
por: Li Zhang, et al.
Publicado: (2021) -
Large bipolaron density at organic semiconductor/electrode interfaces
por: Rijul Dhanker, et al.
Publicado: (2017) -
Ambipolar ferromagnetism by electrostatic doping of a manganite
por: L. M. Zheng, et al.
Publicado: (2018) -
Picene and PTCDI based solution processable ambipolar OFETs
por: Balu Balambiga, et al.
Publicado: (2020) -
Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
por: Hocheon Yoo, et al.
Publicado: (2017)