Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films

Undoped and 3 at % Ag-doped ZnO thin films deposited on glass substrates by the sol– gel dip-coating technique have been studied. X-ray diffraction (XRD) measurements have revealed that the two films are polycrystalline and exhibit a ZnO hexagonal wurtzite structure with an average crystallite size...

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Autores principales:	Hammiche, L., Djouadi, D., Chelouche, A.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2016
Materias:	Ag-doped ZnO sol–gel dip-coating low-temperature photoluminescence thin films Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/b8b378c394d340bbb74771c17c5dbd75
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spelling	oai:doaj.org-article:b8b378c394d340bbb74771c17c5dbd752021-11-21T11:57:50ZLow temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films539.23:544.6.0182537-63651810-648Xhttps://doaj.org/article/b8b378c394d340bbb74771c17c5dbd752016-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2016/article/48843https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Undoped and 3 at % Ag-doped ZnO thin films deposited on glass substrates by the sol– gel dip-coating technique have been studied. X-ray diffraction (XRD) measurements have revealed that the two films are polycrystalline and exhibit a ZnO hexagonal wurtzite structure with an average crystallite size of less than 5 nm. SEM images have demonstrated a homogeneous dispersion of the grains with a spherical morphology of the doped sample. The optical transmittance of the deposited films has indicated that the films transparency exceeds 80% in the visible range. The room temperature photoluminescence (PL) spectra have shown that the UV band (385 nm) intensity is not affected by Ag doping. The PL spectra of pure ZnO thin film have revealed that the bound exciton (BX) and the free exciton (FX) emissions are dependent on recorded temperature. The PL spectrum at 77 K of Ag-doped ZnO has demonstrated that doping with silver enhances BX and optical phonons replica (2LO) (centered at 3.168 eV) emissions. This result indicates that the peak observed at 3.168 eV is not only due to 2LO but also to the transition of electrons from the conduction band to a defect level induced by silver atoms in ZnO crystallites. Hammiche, L.Djouadi, D.Chelouche, A.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticleAg-doped ZnOsol–geldip-coatinglow-temperature photoluminescencethin filmsPhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 15, Iss 1-2, Pp 60-70 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Ag-doped ZnO sol–gel dip-coating low-temperature photoluminescence thin films Physics QC1-999 Electronics TK7800-8360
spellingShingle	Ag-doped ZnO sol–gel dip-coating low-temperature photoluminescence thin films Physics QC1-999 Electronics TK7800-8360 Hammiche, L. Djouadi, D. Chelouche, A. Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films
description	Undoped and 3 at % Ag-doped ZnO thin films deposited on glass substrates by the sol– gel dip-coating technique have been studied. X-ray diffraction (XRD) measurements have revealed that the two films are polycrystalline and exhibit a ZnO hexagonal wurtzite structure with an average crystallite size of less than 5 nm. SEM images have demonstrated a homogeneous dispersion of the grains with a spherical morphology of the doped sample. The optical transmittance of the deposited films has indicated that the films transparency exceeds 80% in the visible range. The room temperature photoluminescence (PL) spectra have shown that the UV band (385 nm) intensity is not affected by Ag doping. The PL spectra of pure ZnO thin film have revealed that the bound exciton (BX) and the free exciton (FX) emissions are dependent on recorded temperature. The PL spectrum at 77 K of Ag-doped ZnO has demonstrated that doping with silver enhances BX and optical phonons replica (2LO) (centered at 3.168 eV) emissions. This result indicates that the peak observed at 3.168 eV is not only due to 2LO but also to the transition of electrons from the conduction band to a defect level induced by silver atoms in ZnO crystallites.
format	article
author	Hammiche, L. Djouadi, D. Chelouche, A.
author_facet	Hammiche, L. Djouadi, D. Chelouche, A.
author_sort	Hammiche, L.
title	Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films
title_short	Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films
title_full	Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films
title_fullStr	Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films
title_full_unstemmed	Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films
title_sort	low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2016
url	https://doaj.org/article/b8b378c394d340bbb74771c17c5dbd75
work_keys_str_mv	AT hammichel lowtemperaturestudyoftheuvemissioninsolgeldipcoatedsilverdopedzincoxidethinfilms AT djouadid lowtemperaturestudyoftheuvemissioninsolgeldipcoatedsilverdopedzincoxidethinfilms AT chelouchea lowtemperaturestudyoftheuvemissioninsolgeldipcoatedsilverdopedzincoxidethinfilms
_version_	1718419386002309120

Low temperature study of the uv emission in sol-gel dip-coated silver-doped zinc oxide thin films

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