Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

Few-layer transition metal dichalcogenides exhibit strong spin-valley entanglement and unconventional quantum Hall states, however their study has been limited by electron mobility. Here, the authors explore how quantum transport varies between even- and odd-layered systems of high mobility.

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Detalles Bibliográficos
Autores principales: Zefei Wu, Shuigang Xu, Huanhuan Lu, Armin Khamoshi, Gui-Bin Liu, Tianyi Han, Yingying Wu, Jiangxiazi Lin, Gen Long, Yuheng He, Yuan Cai, Yugui Yao, Fan Zhang, Ning Wang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/b908251e237a46d286b4c8a841f640d3
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