Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition

Abstract Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: L. Alt, C. Reichl, M. Berl, W. Dietsche, W. Wegscheider
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
R
Q
Acceso en línea:https://doaj.org/article/b92670b927e3476cbdd60ea2973bc875
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:Abstract Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to be defect-free over their whole length, which can be several tens µm. Excellent 1D wires have been produced by cleaving semiconductors (GaAs, AlGaAs) in ultra high vacuum and overgrowing the pristine edge surface by molecular beam epitaxy (MBE)1,2. Unfortunately, this cleaved edge overgrowth (CEO) technique did not find wide-spread use because it requires a series of elaborate steps that are difficult to accomplish. In this Letter, we present a greatly simplified variation of this technique where the cleaving takes place in ambient air and the MBE overgrowth is replaced by a standard deposition process. Wires produced by this cleaved edge deposition (CED) technique have properties that are as least as good as the traditional CEO ones. Due to its simplicity, the CED technique offers a generally accessible way to produce 1D devices.