Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition

Abstract Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to...

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Autores principales:	L. Alt, C. Reichl, M. Berl, W. Dietsche, W. Wegscheider
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b92670b927e3476cbdd60ea2973bc875
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spelling	oai:doaj.org-article:b92670b927e3476cbdd60ea2973bc8752021-11-08T10:50:27ZGate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition10.1038/s41598-021-01130-82045-2322https://doaj.org/article/b92670b927e3476cbdd60ea2973bc8752021-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-01130-8https://doaj.org/toc/2045-2322Abstract Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to be defect-free over their whole length, which can be several tens µm. Excellent 1D wires have been produced by cleaving semiconductors (GaAs, AlGaAs) in ultra high vacuum and overgrowing the pristine edge surface by molecular beam epitaxy (MBE)1,2. Unfortunately, this cleaved edge overgrowth (CEO) technique did not find wide-spread use because it requires a series of elaborate steps that are difficult to accomplish. In this Letter, we present a greatly simplified variation of this technique where the cleaving takes place in ambient air and the MBE overgrowth is replaced by a standard deposition process. Wires produced by this cleaved edge deposition (CED) technique have properties that are as least as good as the traditional CEO ones. Due to its simplicity, the CED technique offers a generally accessible way to produce 1D devices.L. AltC. ReichlM. BerlW. DietscheW. WegscheiderNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q L. Alt C. Reichl M. Berl W. Dietsche W. Wegscheider Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
description	Abstract Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to be defect-free over their whole length, which can be several tens µm. Excellent 1D wires have been produced by cleaving semiconductors (GaAs, AlGaAs) in ultra high vacuum and overgrowing the pristine edge surface by molecular beam epitaxy (MBE)1,2. Unfortunately, this cleaved edge overgrowth (CEO) technique did not find wide-spread use because it requires a series of elaborate steps that are difficult to accomplish. In this Letter, we present a greatly simplified variation of this technique where the cleaving takes place in ambient air and the MBE overgrowth is replaced by a standard deposition process. Wires produced by this cleaved edge deposition (CED) technique have properties that are as least as good as the traditional CEO ones. Due to its simplicity, the CED technique offers a generally accessible way to produce 1D devices.
format	article
author	L. Alt C. Reichl M. Berl W. Dietsche W. Wegscheider
author_facet	L. Alt C. Reichl M. Berl W. Dietsche W. Wegscheider
author_sort	L. Alt
title	Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
title_short	Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
title_full	Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
title_fullStr	Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
title_full_unstemmed	Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
title_sort	gate induced quantum wires in gaas/algaas heterostructures by cleaved edge deposition
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b92670b927e3476cbdd60ea2973bc875
work_keys_str_mv	AT lalt gateinducedquantumwiresingaasalgaasheterostructuresbycleavededgedeposition AT creichl gateinducedquantumwiresingaasalgaasheterostructuresbycleavededgedeposition AT mberl gateinducedquantumwiresingaasalgaasheterostructuresbycleavededgedeposition AT wdietsche gateinducedquantumwiresingaasalgaasheterostructuresbycleavededgedeposition AT wwegscheider gateinducedquantumwiresingaasalgaasheterostructuresbycleavededgedeposition
_version_	1718442656533577728

Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition

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