Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition

Abstract Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to...

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Autores principales: L. Alt, C. Reichl, M. Berl, W. Dietsche, W. Wegscheider
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/b92670b927e3476cbdd60ea2973bc875
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