Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
Abstract Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to...
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Autores principales: | L. Alt, C. Reichl, M. Berl, W. Dietsche, W. Wegscheider |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/b92670b927e3476cbdd60ea2973bc875 |
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