Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

Abstract Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall r...

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Autores principales:	Kyung Jae Lee, Sangyeop Lee, Seul-Ki Bac, Seonghoon Choi, Hakjoon Lee, Jihoon Chang, Suho Choi, Phunvira Chongthanaphisut, Sanghoon Lee, X. Liu, M. Dobrowolska, J. K. Furdyna
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b93a2cedc02b442f827eaad225844747
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spelling	oai:doaj.org-article:b93a2cedc02b442f827eaad2258447472021-12-02T15:08:52ZMagnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance10.1038/s41598-018-20749-82045-2322https://doaj.org/article/b93a2cedc02b442f827eaad2258447472018-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-20749-8https://doaj.org/toc/2045-2322Abstract Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.Kyung Jae LeeSangyeop LeeSeul-Ki BacSeonghoon ChoiHakjoon LeeJihoon ChangSuho ChoiPhunvira ChongthanaphisutSanghoon LeeX. LiuM. DobrowolskaJ. K. FurdynaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Kyung Jae Lee Sangyeop Lee Seul-Ki Bac Seonghoon Choi Hakjoon Lee Jihoon Chang Suho Choi Phunvira Chongthanaphisut Sanghoon Lee X. Liu M. Dobrowolska J. K. Furdyna Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance
description	Abstract Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.
format	article
author	Kyung Jae Lee Sangyeop Lee Seul-Ki Bac Seonghoon Choi Hakjoon Lee Jihoon Chang Suho Choi Phunvira Chongthanaphisut Sanghoon Lee X. Liu M. Dobrowolska J. K. Furdyna
author_facet	Kyung Jae Lee Sangyeop Lee Seul-Ki Bac Seonghoon Choi Hakjoon Lee Jihoon Chang Suho Choi Phunvira Chongthanaphisut Sanghoon Lee X. Liu M. Dobrowolska J. K. Furdyna
author_sort	Kyung Jae Lee
title	Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance
title_short	Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance
title_full	Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance
title_fullStr	Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance
title_full_unstemmed	Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance
title_sort	magnetization reversal in trilayer structures consisting of gamnas layers with opposite signs of anisotropic magnetoresistance
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/b93a2cedc02b442f827eaad225844747
work_keys_str_mv	AT kyungjaelee magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT sangyeoplee magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT seulkibac magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT seonghoonchoi magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT hakjoonlee magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT jihoonchang magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT suhochoi magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT phunvirachongthanaphisut magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT sanghoonlee magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT xliu magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT mdobrowolska magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance AT jkfurdyna magnetizationreversalintrilayerstructuresconsistingofgamnaslayerswithoppositesignsofanisotropicmagnetoresistance
_version_	1718388022519529472

Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

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