Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

Abstract Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall r...

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Bibliographic Details
Main Authors: Kyung Jae Lee, Sangyeop Lee, Seul-Ki Bac, Seonghoon Choi, Hakjoon Lee, Jihoon Chang, Suho Choi, Phunvira Chongthanaphisut, Sanghoon Lee, X. Liu, M. Dobrowolska, J. K. Furdyna
Format: article
Language:EN
Published: Nature Portfolio 2018
Subjects:
R
Q
Online Access:https://doaj.org/article/b93a2cedc02b442f827eaad225844747
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