Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials

The lack of band gap controllability in graphene severely restricts its use in nanoelectronics. Here, the authors predict that post-graphene organic Dirac materials should allow for exceptional electronic tunability between graphene-like semimetallicity and multi-radical and/or closed-shell semicond...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Isaac Alcón, Francesc Viñes, Iberio de P. R. Moreira, Stefan T. Bromley
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/b98a052475d54bfcb8c8381927d15c02
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:b98a052475d54bfcb8c8381927d15c02
record_format	dspace
spelling	oai:doaj.org-article:b98a052475d54bfcb8c8381927d15c022021-12-02T14:41:18ZExistence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials10.1038/s41467-017-01977-42041-1723https://doaj.org/article/b98a052475d54bfcb8c8381927d15c022017-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-01977-4https://doaj.org/toc/2041-1723The lack of band gap controllability in graphene severely restricts its use in nanoelectronics. Here, the authors predict that post-graphene organic Dirac materials should allow for exceptional electronic tunability between graphene-like semimetallicity and multi-radical and/or closed-shell semiconducting states.Isaac AlcónFrancesc ViñesIberio de P. R. MoreiraStefan T. BromleyNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Isaac Alcón Francesc Viñes Iberio de P. R. Moreira Stefan T. Bromley Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials
description	The lack of band gap controllability in graphene severely restricts its use in nanoelectronics. Here, the authors predict that post-graphene organic Dirac materials should allow for exceptional electronic tunability between graphene-like semimetallicity and multi-radical and/or closed-shell semiconducting states.
format	article
author	Isaac Alcón Francesc Viñes Iberio de P. R. Moreira Stefan T. Bromley
author_facet	Isaac Alcón Francesc Viñes Iberio de P. R. Moreira Stefan T. Bromley
author_sort	Isaac Alcón
title	Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials
title_short	Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials
title_full	Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials
title_fullStr	Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials
title_full_unstemmed	Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials
title_sort	existence of multi-radical and closed-shell semiconducting states in post-graphene organic dirac materials
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/b98a052475d54bfcb8c8381927d15c02
work_keys_str_mv	AT isaacalcon existenceofmultiradicalandclosedshellsemiconductingstatesinpostgrapheneorganicdiracmaterials AT francescvines existenceofmultiradicalandclosedshellsemiconductingstatesinpostgrapheneorganicdiracmaterials AT iberiodeprmoreira existenceofmultiradicalandclosedshellsemiconductingstatesinpostgrapheneorganicdiracmaterials AT stefantbromley existenceofmultiradicalandclosedshellsemiconductingstatesinpostgrapheneorganicdiracmaterials
_version_	1718389956311777280

Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials

Ejemplares similares