The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode...

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Autores principales:	Egor Polyntsev, Evgeny Erofeev, Igor Yunusov
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	microwave photonics telecom 5G power conversion GaN Schottky barrier Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/b9a9cf6c73fa462981cb082fbc22feb4
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spelling	oai:doaj.org-article:b9a9cf6c73fa462981cb082fbc22feb42021-11-25T17:24:46ZThe Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications10.3390/electronics102228022079-9292https://doaj.org/article/b9a9cf6c73fa462981cb082fbc22feb42021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2802https://doaj.org/toc/2079-9292In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al<sub>0.23</sub>Ga<sub>0.77</sub>N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower V<sub>ON</sub> and higher I<sub>F</sub> compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: V<sub>ON</sub> = 0.6 (at I<sub>F</sub> = 1 mA/mm), forward voltage of the diode V<sub>F</sub> = 1.6 V (at I<sub>F</sub> = 100 mA/mm), maximum reverse voltage V<sub>R</sub> = 300 V, reverse leakage current I<sub>R</sub> = 0.04 μA/mm (at V<sub>R</sub> = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.Egor PolyntsevEvgeny ErofeevIgor YunusovMDPI AGarticlemicrowave photonicstelecom5Gpower conversionGaNSchottky barrierElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2802, p 2802 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	microwave photonics telecom 5G power conversion GaN Schottky barrier Electronics TK7800-8360
spellingShingle	microwave photonics telecom 5G power conversion GaN Schottky barrier Electronics TK7800-8360 Egor Polyntsev Evgeny Erofeev Igor Yunusov The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications
description	In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al<sub>0.23</sub>Ga<sub>0.77</sub>N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower V<sub>ON</sub> and higher I<sub>F</sub> compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: V<sub>ON</sub> = 0.6 (at I<sub>F</sub> = 1 mA/mm), forward voltage of the diode V<sub>F</sub> = 1.6 V (at I<sub>F</sub> = 100 mA/mm), maximum reverse voltage V<sub>R</sub> = 300 V, reverse leakage current I<sub>R</sub> = 0.04 μA/mm (at V<sub>R</sub> = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.
format	article
author	Egor Polyntsev Evgeny Erofeev Igor Yunusov
author_facet	Egor Polyntsev Evgeny Erofeev Igor Yunusov
author_sort	Egor Polyntsev
title	The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications
title_short	The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications
title_full	The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications
title_fullStr	The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications
title_full_unstemmed	The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications
title_sort	influence of design on electrical performance of algan/gan lateral schottky barrier diodes for energy-efficient power applications
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/b9a9cf6c73fa462981cb082fbc22feb4
work_keys_str_mv	AT egorpolyntsev theinfluenceofdesignonelectricalperformanceofalganganlateralschottkybarrierdiodesforenergyefficientpowerapplications AT evgenyerofeev theinfluenceofdesignonelectricalperformanceofalganganlateralschottkybarrierdiodesforenergyefficientpowerapplications AT igoryunusov theinfluenceofdesignonelectricalperformanceofalganganlateralschottkybarrierdiodesforenergyefficientpowerapplications AT egorpolyntsev influenceofdesignonelectricalperformanceofalganganlateralschottkybarrierdiodesforenergyefficientpowerapplications AT evgenyerofeev influenceofdesignonelectricalperformanceofalganganlateralschottkybarrierdiodesforenergyefficientpowerapplications AT igoryunusov influenceofdesignonelectricalperformanceofalganganlateralschottkybarrierdiodesforenergyefficientpowerapplications
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The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

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