The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode...

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Bibliographic Details
Main Authors: Egor Polyntsev, Evgeny Erofeev, Igor Yunusov
Format: article
Language:EN
Published: MDPI AG 2021
Subjects:
5G
GaN
Online Access:https://doaj.org/article/b9a9cf6c73fa462981cb082fbc22feb4
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