Non-Hebbian learning implementation in light-controlled resistive memory devices.

Non-Hebbian learning is often encountered in different bio-organisms. In these processes, the strength of a synapse connecting two neurons is controlled not only by the signals exchanged between the neurons, but also by an additional factor external to the synaptic structure. Here we show the implem...

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Autores principales:	Mariana Ungureanu, Pablo Stoliar, Roger Llopis, Fèlix Casanova, Luis E Hueso
Formato:	article
Lenguaje:	EN
Publicado:	Public Library of Science (PLoS) 2012
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ba4fdd96a3bf405c99733b3b0fa5cde6
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id	oai:doaj.org-article:ba4fdd96a3bf405c99733b3b0fa5cde6
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spelling	oai:doaj.org-article:ba4fdd96a3bf405c99733b3b0fa5cde62021-11-18T08:05:02ZNon-Hebbian learning implementation in light-controlled resistive memory devices.1932-620310.1371/journal.pone.0052042https://doaj.org/article/ba4fdd96a3bf405c99733b3b0fa5cde62012-01-01T00:00:00Zhttps://www.ncbi.nlm.nih.gov/pmc/articles/pmid/23251679/?tool=EBIhttps://doaj.org/toc/1932-6203Non-Hebbian learning is often encountered in different bio-organisms. In these processes, the strength of a synapse connecting two neurons is controlled not only by the signals exchanged between the neurons, but also by an additional factor external to the synaptic structure. Here we show the implementation of non-Hebbian learning in a single solid-state resistive memory device. The output of our device is controlled not only by the applied voltages, but also by the illumination conditions under which it operates. We demonstrate that our metal/oxide/semiconductor device learns more efficiently at higher applied voltages but also when light, an external parameter, is present during the information writing steps. Conversely, memory erasing is more efficiently at higher applied voltages and in the dark. Translating neuronal activity into simple solid-state devices could provide a deeper understanding of complex brain processes and give insight into non-binary computing possibilities.Mariana UngureanuPablo StoliarRoger LlopisFèlix CasanovaLuis E HuesoPublic Library of Science (PLoS)articleMedicineRScienceQENPLoS ONE, Vol 7, Iss 12, p e52042 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mariana Ungureanu Pablo Stoliar Roger Llopis Fèlix Casanova Luis E Hueso Non-Hebbian learning implementation in light-controlled resistive memory devices.
description	Non-Hebbian learning is often encountered in different bio-organisms. In these processes, the strength of a synapse connecting two neurons is controlled not only by the signals exchanged between the neurons, but also by an additional factor external to the synaptic structure. Here we show the implementation of non-Hebbian learning in a single solid-state resistive memory device. The output of our device is controlled not only by the applied voltages, but also by the illumination conditions under which it operates. We demonstrate that our metal/oxide/semiconductor device learns more efficiently at higher applied voltages but also when light, an external parameter, is present during the information writing steps. Conversely, memory erasing is more efficiently at higher applied voltages and in the dark. Translating neuronal activity into simple solid-state devices could provide a deeper understanding of complex brain processes and give insight into non-binary computing possibilities.
format	article
author	Mariana Ungureanu Pablo Stoliar Roger Llopis Fèlix Casanova Luis E Hueso
author_facet	Mariana Ungureanu Pablo Stoliar Roger Llopis Fèlix Casanova Luis E Hueso
author_sort	Mariana Ungureanu
title	Non-Hebbian learning implementation in light-controlled resistive memory devices.
title_short	Non-Hebbian learning implementation in light-controlled resistive memory devices.
title_full	Non-Hebbian learning implementation in light-controlled resistive memory devices.
title_fullStr	Non-Hebbian learning implementation in light-controlled resistive memory devices.
title_full_unstemmed	Non-Hebbian learning implementation in light-controlled resistive memory devices.
title_sort	non-hebbian learning implementation in light-controlled resistive memory devices.
publisher	Public Library of Science (PLoS)
publishDate	2012
url	https://doaj.org/article/ba4fdd96a3bf405c99733b3b0fa5cde6
work_keys_str_mv	AT marianaungureanu nonhebbianlearningimplementationinlightcontrolledresistivememorydevices AT pablostoliar nonhebbianlearningimplementationinlightcontrolledresistivememorydevices AT rogerllopis nonhebbianlearningimplementationinlightcontrolledresistivememorydevices AT felixcasanova nonhebbianlearningimplementationinlightcontrolledresistivememorydevices AT luisehueso nonhebbianlearningimplementationinlightcontrolledresistivememorydevices
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Non-Hebbian learning implementation in light-controlled resistive memory devices.

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