Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

Abstract Realizing applicably appreciated spintronic functionalities basing on the coupling between charge and spin degrees of freedom is still a challenge. For example, the anisotropic magnetoresistance (AMR) effect can be utilized to read out the information stored in magnetic structures. However,...

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Autores principales:	Z. L. Sun, A. F. Wang, H. M. Mu, H. H. Wang, Z. F. Wang, T. Wu, Z. Y. Wang, X. Y. Zhou, X. H. Chen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
Acceso en línea:	https://doaj.org/article/ba63076675ac4212a1db347de9c57692
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spelling	oai:doaj.org-article:ba63076675ac4212a1db347de9c576922021-11-21T12:41:47ZField-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb210.1038/s41535-021-00397-42397-4648https://doaj.org/article/ba63076675ac4212a1db347de9c576922021-11-01T00:00:00Zhttps://doi.org/10.1038/s41535-021-00397-4https://doaj.org/toc/2397-4648Abstract Realizing applicably appreciated spintronic functionalities basing on the coupling between charge and spin degrees of freedom is still a challenge. For example, the anisotropic magnetoresistance (AMR) effect can be utilized to read out the information stored in magnetic structures. However, the application of AMR in antiferromagnet-based spintronics is usually hindered by the small AMR value. Here, we discover a colossal AMR with its value reaching 1.84 × 106% at 2 K, which stems from the field-induced metal-to-insulator transition (MIT), in a nearly Dirac material EuMnSb2. Density functional theory calculations identify a Dirac-like band around the Y point that depends strongly on the spin–orbit coupling and dominates the electrical transport. The indirect band gap at the Fermi level evolves with magnetic structure of Eu2+ moments, consequently giving rise to the field-induced MIT and the colossal AMR. Our results suggest that the antiferromagnetic topological materials can serve as a fertile ground for spintronics applications.Z. L. SunA. F. WangH. M. MuH. H. WangZ. F. WangT. WuZ. Y. WangX. Y. ZhouX. H. ChenNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 6, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Z. L. Sun A. F. Wang H. M. Mu H. H. Wang Z. F. Wang T. Wu Z. Y. Wang X. Y. Zhou X. H. Chen Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2
description	Abstract Realizing applicably appreciated spintronic functionalities basing on the coupling between charge and spin degrees of freedom is still a challenge. For example, the anisotropic magnetoresistance (AMR) effect can be utilized to read out the information stored in magnetic structures. However, the application of AMR in antiferromagnet-based spintronics is usually hindered by the small AMR value. Here, we discover a colossal AMR with its value reaching 1.84 × 106% at 2 K, which stems from the field-induced metal-to-insulator transition (MIT), in a nearly Dirac material EuMnSb2. Density functional theory calculations identify a Dirac-like band around the Y point that depends strongly on the spin–orbit coupling and dominates the electrical transport. The indirect band gap at the Fermi level evolves with magnetic structure of Eu2+ moments, consequently giving rise to the field-induced MIT and the colossal AMR. Our results suggest that the antiferromagnetic topological materials can serve as a fertile ground for spintronics applications.
format	article
author	Z. L. Sun A. F. Wang H. M. Mu H. H. Wang Z. F. Wang T. Wu Z. Y. Wang X. Y. Zhou X. H. Chen
author_facet	Z. L. Sun A. F. Wang H. M. Mu H. H. Wang Z. F. Wang T. Wu Z. Y. Wang X. Y. Zhou X. H. Chen
author_sort	Z. L. Sun
title	Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2
title_short	Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2
title_full	Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2
title_fullStr	Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2
title_full_unstemmed	Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2
title_sort	field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly dirac material eumnsb2
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/ba63076675ac4212a1db347de9c57692
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Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

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