Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

Abstract Realizing applicably appreciated spintronic functionalities basing on the coupling between charge and spin degrees of freedom is still a challenge. For example, the anisotropic magnetoresistance (AMR) effect can be utilized to read out the information stored in magnetic structures. However,...

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Autores principales: Z. L. Sun, A. F. Wang, H. M. Mu, H. H. Wang, Z. F. Wang, T. Wu, Z. Y. Wang, X. Y. Zhou, X. H. Chen
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/ba63076675ac4212a1db347de9c57692
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