Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2
Abstract Realizing applicably appreciated spintronic functionalities basing on the coupling between charge and spin degrees of freedom is still a challenge. For example, the anisotropic magnetoresistance (AMR) effect can be utilized to read out the information stored in magnetic structures. However,...
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Auteurs principaux: | Z. L. Sun, A. F. Wang, H. M. Mu, H. H. Wang, Z. F. Wang, T. Wu, Z. Y. Wang, X. Y. Zhou, X. H. Chen |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
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Sujets: | |
Accès en ligne: | https://doaj.org/article/ba63076675ac4212a1db347de9c57692 |
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