Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.

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Bibliographic Details
Main Authors: Michael Zürch, Hung-Tzu Chang, Lauren J. Borja, Peter M. Kraus, Scott K. Cushing, Andrey Gandman, Christopher J. Kaplan, Myoung Hwan Oh, James S. Prell, David Prendergast, Chaitanya D. Pemmaraju, Daniel M. Neumark, Stephen R. Leone
Format: article
Language:EN
Published: Nature Portfolio 2017
Subjects:
Science
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Online Access:https://doaj.org/article/ba8b426c8d0649ac9d05e3e3d3d83dc7
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Summary:Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.

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