Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.

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Autores principales:	Michael Zürch, Hung-Tzu Chang, Lauren J. Borja, Peter M. Kraus, Scott K. Cushing, Andrey Gandman, Christopher J. Kaplan, Myoung Hwan Oh, James S. Prell, David Prendergast, Chaitanya D. Pemmaraju, Daniel M. Neumark, Stephen R. Leone
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/ba8b426c8d0649ac9d05e3e3d3d83dc7
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spelling	oai:doaj.org-article:ba8b426c8d0649ac9d05e3e3d3d83dc72021-12-02T14:40:56ZDirect and simultaneous observation of ultrafast electron and hole dynamics in germanium10.1038/ncomms157342041-1723https://doaj.org/article/ba8b426c8d0649ac9d05e3e3d3d83dc72017-06-01T00:00:00Zhttps://doi.org/10.1038/ncomms15734https://doaj.org/toc/2041-1723Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.Michael ZürchHung-Tzu ChangLauren J. BorjaPeter M. KrausScott K. CushingAndrey GandmanChristopher J. KaplanMyoung Hwan OhJames S. PrellDavid PrendergastChaitanya D. PemmarajuDaniel M. NeumarkStephen R. LeoneNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-11 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Michael Zürch Hung-Tzu Chang Lauren J. Borja Peter M. Kraus Scott K. Cushing Andrey Gandman Christopher J. Kaplan Myoung Hwan Oh James S. Prell David Prendergast Chaitanya D. Pemmaraju Daniel M. Neumark Stephen R. Leone Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
description	Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.
format	article
author	Michael Zürch Hung-Tzu Chang Lauren J. Borja Peter M. Kraus Scott K. Cushing Andrey Gandman Christopher J. Kaplan Myoung Hwan Oh James S. Prell David Prendergast Chaitanya D. Pemmaraju Daniel M. Neumark Stephen R. Leone
author_facet	Michael Zürch Hung-Tzu Chang Lauren J. Borja Peter M. Kraus Scott K. Cushing Andrey Gandman Christopher J. Kaplan Myoung Hwan Oh James S. Prell David Prendergast Chaitanya D. Pemmaraju Daniel M. Neumark Stephen R. Leone
author_sort	Michael Zürch
title	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_short	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_full	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_fullStr	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_full_unstemmed	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_sort	direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ba8b426c8d0649ac9d05e3e3d3d83dc7
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Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

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