Intraband nonresonant optical polaron in semimagnetic semiconductors

The theory of a weakly-coupling optical polaron for a narrow gap semimagnetic semiconductor with anisotropic energy spectrum is developed in an external magnetic field. The socalled intraband nonresonant polaron in a classical magnetic field is considered. Analytical expressions for main characteris...

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Autor principal:	Seyid-Rzayeva, S.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2010
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/bae8052e74b84cb6b6712d30cca083bd
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spelling	oai:doaj.org-article:bae8052e74b84cb6b6712d30cca083bd2021-11-21T12:03:12ZIntraband nonresonant optical polaron in semimagnetic semiconductors2537-63651810-648Xhttps://doaj.org/article/bae8052e74b84cb6b6712d30cca083bd2010-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4260https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The theory of a weakly-coupling optical polaron for a narrow gap semimagnetic semiconductor with anisotropic energy spectrum is developed in an external magnetic field. The socalled intraband nonresonant polaron in a classical magnetic field is considered. Analytical expressions for main characteristic of the polaron, such as binding energy and lowest polaron subband energy, transverse and longitudinal polaron effective masses of the electron, are also found. The threshold mechanism for existence of intraband nonresonant polaron in a classical magnetic field is discovered. In the case of intraband polaron the general conditions for the determination of permissible magnetic field regions are established at given low temperature. The temperature dependences for polaron binding energy and polaron lowest subband energy, for transverse and longitudinal polaron effective masses in a low temperature range are obtained on the basis of quantitative calculations for a chosen corresponding value of the magnetic field. Seyid-Rzayeva, S.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 3-4, Pp 261-268 (2010)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Seyid-Rzayeva, S. Intraband nonresonant optical polaron in semimagnetic semiconductors
description	The theory of a weakly-coupling optical polaron for a narrow gap semimagnetic semiconductor with anisotropic energy spectrum is developed in an external magnetic field. The socalled intraband nonresonant polaron in a classical magnetic field is considered. Analytical expressions for main characteristic of the polaron, such as binding energy and lowest polaron subband energy, transverse and longitudinal polaron effective masses of the electron, are also found. The threshold mechanism for existence of intraband nonresonant polaron in a classical magnetic field is discovered. In the case of intraband polaron the general conditions for the determination of permissible magnetic field regions are established at given low temperature. The temperature dependences for polaron binding energy and polaron lowest subband energy, for transverse and longitudinal polaron effective masses in a low temperature range are obtained on the basis of quantitative calculations for a chosen corresponding value of the magnetic field.
format	article
author	Seyid-Rzayeva, S.
author_facet	Seyid-Rzayeva, S.
author_sort	Seyid-Rzayeva, S.
title	Intraband nonresonant optical polaron in semimagnetic semiconductors
title_short	Intraband nonresonant optical polaron in semimagnetic semiconductors
title_full	Intraband nonresonant optical polaron in semimagnetic semiconductors
title_fullStr	Intraband nonresonant optical polaron in semimagnetic semiconductors
title_full_unstemmed	Intraband nonresonant optical polaron in semimagnetic semiconductors
title_sort	intraband nonresonant optical polaron in semimagnetic semiconductors
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2010
url	https://doaj.org/article/bae8052e74b84cb6b6712d30cca083bd
work_keys_str_mv	AT seyidrzayevas intrabandnonresonantopticalpolaroninsemimagneticsemiconductors
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Intraband nonresonant optical polaron in semimagnetic semiconductors

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