Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cro...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/bc367522185d4bbf840c158ae4751bfb |
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| Sumario: | A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H<sub>2</sub>O<sub>2.</sub> The chemical oxidation degree of GeO<sub>2</sub>, Sb<sub>2</sub>O<sub>3</sub>, and TeO<sub>2</sub> evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface after CMP; i.e., the corrosion current of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface CMP slurry could achieve an almost recess-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP. |
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