Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cro...
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MDPI AG
2021
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oai:doaj.org-article:bc367522185d4bbf840c158ae4751bfb2021-11-25T16:39:38ZFenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization10.3390/app1122108722076-3417https://doaj.org/article/bc367522185d4bbf840c158ae4751bfb2021-11-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/22/10872https://doaj.org/toc/2076-3417A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H<sub>2</sub>O<sub>2.</sub> The chemical oxidation degree of GeO<sub>2</sub>, Sb<sub>2</sub>O<sub>3</sub>, and TeO<sub>2</sub> evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface after CMP; i.e., the corrosion current of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface CMP slurry could achieve an almost recess-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP.Gi-Ppeum JeongYoung-Hye SonJun-Seong ParkPil-Su KimMan-Hyup HanSeong-Wan HongJin-Hyung ParkHao CuiBo-Un YoonJea-Gun ParkMDPI AGarticlechemical-mechanical planarizationphase-change random-access memoryFenton reactionferric–ionic catalystcorrosion inhibitorchalcogenideTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 10872, p 10872 (2021) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
chemical-mechanical planarization phase-change random-access memory Fenton reaction ferric–ionic catalyst corrosion inhibitor chalcogenide Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 |
| spellingShingle |
chemical-mechanical planarization phase-change random-access memory Fenton reaction ferric–ionic catalyst corrosion inhibitor chalcogenide Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 Gi-Ppeum Jeong Young-Hye Son Jun-Seong Park Pil-Su Kim Man-Hyup Han Seong-Wan Hong Jin-Hyung Park Hao Cui Bo-Un Yoon Jea-Gun Park Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization |
| description |
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H<sub>2</sub>O<sub>2.</sub> The chemical oxidation degree of GeO<sub>2</sub>, Sb<sub>2</sub>O<sub>3</sub>, and TeO<sub>2</sub> evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface after CMP; i.e., the corrosion current of the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface CMP slurry could achieve an almost recess-free Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP. |
| format |
article |
| author |
Gi-Ppeum Jeong Young-Hye Son Jun-Seong Park Pil-Su Kim Man-Hyup Han Seong-Wan Hong Jin-Hyung Park Hao Cui Bo-Un Yoon Jea-Gun Park |
| author_facet |
Gi-Ppeum Jeong Young-Hye Son Jun-Seong Park Pil-Su Kim Man-Hyup Han Seong-Wan Hong Jin-Hyung Park Hao Cui Bo-Un Yoon Jea-Gun Park |
| author_sort |
Gi-Ppeum Jeong |
| title |
Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization |
| title_short |
Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization |
| title_full |
Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization |
| title_fullStr |
Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization |
| title_full_unstemmed |
Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization |
| title_sort |
fenton reaction for enhancing polishing rate and protonated amine functional group polymer for inhibiting corrosion in ge<sub>1</sub>sb<sub>4</sub>te<sub>5</sub> film surface chemical-mechanical-planarization |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/bc367522185d4bbf840c158ae4751bfb |
| work_keys_str_mv |
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