Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization

A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cro...

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Autores principales:	Gi-Ppeum Jeong, Young-Hye Son, Jun-Seong Park, Pil-Su Kim, Man-Hyup Han, Seong-Wan Hong, Jin-Hyung Park, Hao Cui, Bo-Un Yoon, Jea-Gun Park
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	chemical-mechanical planarization phase-change random-access memory Fenton reaction ferric–ionic catalyst corrosion inhibitor chalcogenide Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/bc367522185d4bbf840c158ae4751bfb
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Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>5</sub> Film Surface Chemical-Mechanical-Planarization

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