Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

Abstract The temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in R...

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Autores principales: M. Osiekowicz, D. Staszczuk, K. Olkowska-Pucko, Ł. Kipczak, M. Grzeszczyk, M. Zinkiewicz, K. Nogajewski, Z. R. Kudrynskyi, Z. D. Kovalyuk, A. Patané, A. Babiński, M. R. Molas
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Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/bc8dd62898a3458997fbe69b84ccd213
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spelling oai:doaj.org-article:bc8dd62898a3458997fbe69b84ccd2132021-12-02T14:12:41ZResonance and antiresonance in Raman scattering in GaSe and InSe crystals10.1038/s41598-020-79411-x2045-2322https://doaj.org/article/bc8dd62898a3458997fbe69b84ccd2132021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-79411-xhttps://doaj.org/toc/2045-2322Abstract The temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.M. OsiekowiczD. StaszczukK. Olkowska-PuckoŁ. KipczakM. GrzeszczykM. ZinkiewiczK. NogajewskiZ. R. KudrynskyiZ. D. KovalyukA. PatanéA. BabińskiM. R. MolasNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
M. Osiekowicz
D. Staszczuk
K. Olkowska-Pucko
Ł. Kipczak
M. Grzeszczyk
M. Zinkiewicz
K. Nogajewski
Z. R. Kudrynskyi
Z. D. Kovalyuk
A. Patané
A. Babiński
M. R. Molas
Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
description Abstract The temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.
format article
author M. Osiekowicz
D. Staszczuk
K. Olkowska-Pucko
Ł. Kipczak
M. Grzeszczyk
M. Zinkiewicz
K. Nogajewski
Z. R. Kudrynskyi
Z. D. Kovalyuk
A. Patané
A. Babiński
M. R. Molas
author_facet M. Osiekowicz
D. Staszczuk
K. Olkowska-Pucko
Ł. Kipczak
M. Grzeszczyk
M. Zinkiewicz
K. Nogajewski
Z. R. Kudrynskyi
Z. D. Kovalyuk
A. Patané
A. Babiński
M. R. Molas
author_sort M. Osiekowicz
title Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
title_short Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
title_full Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
title_fullStr Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
title_full_unstemmed Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
title_sort resonance and antiresonance in raman scattering in gase and inse crystals
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/bc8dd62898a3458997fbe69b84ccd213
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AT dstaszczuk resonanceandantiresonanceinramanscatteringingaseandinsecrystals
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