Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system

Abstract Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to investigate the effects of nonideal resistive switching, such as an unstable high-resistance state (HRS), negative set (...

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Autores principales:	Jongmin Park, Hojeong Ryu, Sungjun Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/bcc234de557b4533a6e87fde26960ef6
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spelling	oai:doaj.org-article:bcc234de557b4533a6e87fde26960ef62021-12-02T18:51:47ZNonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system10.1038/s41598-021-96197-82045-2322https://doaj.org/article/bcc234de557b4533a6e87fde26960ef62021-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-96197-8https://doaj.org/toc/2045-2322Abstract Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to investigate the effects of nonideal resistive switching, such as an unstable high-resistance state (HRS), negative set (N-set), and temporal disconnection, during the set process and the conductance saturation feature for synaptic applications. The device shows an I–V curve based on the positive set in the bipolar resistive switching mode. In 1000 endurance tests, we investigated the changes in the HRS, which displays large fluctuations compared with the stable low-resistance state, and the negative effect on the performance of the device resulting from such an instability. The impact of the N-set, which originates from the negative voltage on the top electrode, was studied through the process of intentional N-set through the repetition of 10 ON/OFF cycles. The Ag/ZnO/TiN device showed saturation characteristics in conductance modulation according to the magnitude of the applied pulse. Therefore, potentiation or depression was performed via consecutive pulses with diverse amplitudes. We also studied the spontaneous conductance decay in the saturation feature required to emulate short-term plasticity.Jongmin ParkHojeong RyuSungjun KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Jongmin Park Hojeong Ryu Sungjun Kim Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
description	Abstract Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to investigate the effects of nonideal resistive switching, such as an unstable high-resistance state (HRS), negative set (N-set), and temporal disconnection, during the set process and the conductance saturation feature for synaptic applications. The device shows an I–V curve based on the positive set in the bipolar resistive switching mode. In 1000 endurance tests, we investigated the changes in the HRS, which displays large fluctuations compared with the stable low-resistance state, and the negative effect on the performance of the device resulting from such an instability. The impact of the N-set, which originates from the negative voltage on the top electrode, was studied through the process of intentional N-set through the repetition of 10 ON/OFF cycles. The Ag/ZnO/TiN device showed saturation characteristics in conductance modulation according to the magnitude of the applied pulse. Therefore, potentiation or depression was performed via consecutive pulses with diverse amplitudes. We also studied the spontaneous conductance decay in the saturation feature required to emulate short-term plasticity.
format	article
author	Jongmin Park Hojeong Ryu Sungjun Kim
author_facet	Jongmin Park Hojeong Ryu Sungjun Kim
author_sort	Jongmin Park
title	Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
title_short	Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
title_full	Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
title_fullStr	Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
title_full_unstemmed	Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
title_sort	nonideal resistive and synaptic characteristics in ag/zno/tin device for neuromorphic system
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/bcc234de557b4533a6e87fde26960ef6
work_keys_str_mv	AT jongminpark nonidealresistiveandsynapticcharacteristicsinagznotindeviceforneuromorphicsystem AT hojeongryu nonidealresistiveandsynapticcharacteristicsinagznotindeviceforneuromorphicsystem AT sungjunkim nonidealresistiveandsynapticcharacteristicsinagznotindeviceforneuromorphicsystem
_version_	1718377408572162048

Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system

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