Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors
The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.
Enregistré dans:
Auteurs principaux: | Kyung-Sang Cho, Keun Heo, Chan-Wook Baik, Jun Young Choi, Heejeong Jeong, Sungwoo Hwang, Sang Yeol Lee |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2017
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/bce65751698c4f368a09eb2dfa8d82ae |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
par: Byeong Hyeon Lee, et autres
Publié: (2019) -
Probing intermediates of the induction period prior to nucleation and growth of semiconductor quantum dots
par: Mingyang Liu, et autres
Publié: (2017) -
Black Phosphorus—Diketopyrrolopyrrole Polymer Semiconductor Hybrid for Enhanced Charge Transfer and Photodetection
par: Mei Xian Low, et autres
Publié: (2021) -
Measurements of growing surface tension of amorphous–amorphous interfaces on approaching the colloidal glass transition
par: Divya Ganapathi, et autres
Publié: (2018) -
Crystallisation of the amorphous ices in the intermediate pressure regime
par: J. Stern, et autres
Publié: (2017)