Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene

Abstract Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of t...

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Autores principales:	Sameer Grover, Anupama Joshi, Ashwin Tulapurkar, Mandar M. Deshmukh
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/bd14d70d4d3141309c43d73d68e9ef94
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spelling	oai:doaj.org-article:bd14d70d4d3141309c43d73d68e9ef942021-12-02T15:06:06ZAbrupt p-n junction using ionic gating at zero-bias in bilayer graphene10.1038/s41598-017-03264-02045-2322https://doaj.org/article/bd14d70d4d3141309c43d73d68e9ef942017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03264-0https://doaj.org/toc/2045-2322Abstract Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is frozen intentionally, the photovoltage exhibits a six-fold pattern indicative of the hot electron induced photothermoelectric effect that has also been seen in graphene p-n junctions made using metallic gates. We have observed that the photovoltage increases with decreasing temperature indicating a dominant role of supercollision scattering. Our technique can also be extended to other 2D materials and to finer features that will lead to p-n junctions which span a large area, like a superlattice, that can generate a larger photoresponse. Our work creating abrupt p-n junctions is distinct from previous works that use a source–drain bias voltage with a single ionic gate creating a spatially graded p-n junction.Sameer GroverAnupama JoshiAshwin TulapurkarMandar M. DeshmukhNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sameer Grover Anupama Joshi Ashwin Tulapurkar Mandar M. Deshmukh Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
description	Abstract Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is frozen intentionally, the photovoltage exhibits a six-fold pattern indicative of the hot electron induced photothermoelectric effect that has also been seen in graphene p-n junctions made using metallic gates. We have observed that the photovoltage increases with decreasing temperature indicating a dominant role of supercollision scattering. Our technique can also be extended to other 2D materials and to finer features that will lead to p-n junctions which span a large area, like a superlattice, that can generate a larger photoresponse. Our work creating abrupt p-n junctions is distinct from previous works that use a source–drain bias voltage with a single ionic gate creating a spatially graded p-n junction.
format	article
author	Sameer Grover Anupama Joshi Ashwin Tulapurkar Mandar M. Deshmukh
author_facet	Sameer Grover Anupama Joshi Ashwin Tulapurkar Mandar M. Deshmukh
author_sort	Sameer Grover
title	Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
title_short	Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
title_full	Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
title_fullStr	Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
title_full_unstemmed	Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
title_sort	abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/bd14d70d4d3141309c43d73d68e9ef94
work_keys_str_mv	AT sameergrover abruptpnjunctionusingionicgatingatzerobiasinbilayergraphene AT anupamajoshi abruptpnjunctionusingionicgatingatzerobiasinbilayergraphene AT ashwintulapurkar abruptpnjunctionusingionicgatingatzerobiasinbilayergraphene AT mandarmdeshmukh abruptpnjunctionusingionicgatingatzerobiasinbilayergraphene
_version_	1718388607520079872

Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene

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