Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
Abstract Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of t...
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| Main Authors: | , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2017
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| Subjects: | |
| Online Access: | https://doaj.org/article/bd14d70d4d3141309c43d73d68e9ef94 |
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