Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
Abstract Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of t...
Enregistré dans:
| Auteurs principaux: | , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2017
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/bd14d70d4d3141309c43d73d68e9ef94 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|