Site Mixing for Engineering Magnetic Topological Insulators

The van der Waals compound, MnBi_{2}Te_{4}, is the first intrinsic magnetic topological insulator, providing a materials platform for exploring exotic quantum phenomena such as the axion insulator state and the quantum anomalous Hall effect. However, intrinsic structural imperfections lead to bulk c...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Yaohua Liu, Lin-Lin Wang, Qiang Zheng, Zengle Huang, Xiaoping Wang, Miaofang Chi, Yan Wu, Bryan C. Chakoumakos, Michael A. McGuire, Brian C. Sales, Weida Wu, Jiaqiang Yan
Formato:	article
Lenguaje:	EN
Publicado:	American Physical Society 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/bd37acaef0d24d78b677b763a3d610d9
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:bd37acaef0d24d78b677b763a3d610d9
record_format	dspace
spelling	oai:doaj.org-article:bd37acaef0d24d78b677b763a3d610d92021-12-02T14:41:36ZSite Mixing for Engineering Magnetic Topological Insulators10.1103/PhysRevX.11.0210332160-3308https://doaj.org/article/bd37acaef0d24d78b677b763a3d610d92021-05-01T00:00:00Zhttp://doi.org/10.1103/PhysRevX.11.021033http://doi.org/10.1103/PhysRevX.11.021033https://doaj.org/toc/2160-3308The van der Waals compound, MnBi_{2}Te_{4}, is the first intrinsic magnetic topological insulator, providing a materials platform for exploring exotic quantum phenomena such as the axion insulator state and the quantum anomalous Hall effect. However, intrinsic structural imperfections lead to bulk conductivity, and the roles of magnetic defects are still unknown. With higher concentrations of the same types of magnetic defects, the isostructural compound MnSb_{2}Te_{4} is a better model system for a systematic investigation of the connections among magnetism, topology, and lattice defects. In this work, the impact of antisite defects on the magnetism and electronic structure is studied in MnSb_{2}Te_{4}. Mn-Sb site mixing leads to complex magnetic structures and tunes the interlayer magnetic coupling between antiferromagnetic and ferromagnetic. The detailed nonstoichiometry and site mixing of MnSb_{2}Te_{4} crystals depend on the growth parameters, which can lead to ≈40% of Mn sites occupied by Sb and ≈15% of Sb sites by Mn in as-grown crystals. Single-crystal neutron diffraction and electron microscopy studies show nearly random distribution of the antisite defects. Band structure calculations suggest that the Mn-Sb site mixing favors a ferromagnetic interlayer coupling, consistent with experimental observation, but is detrimental to the band inversion required for a nontrivial topology. Our results suggest a long-range magnetic order of Mn ions sitting on Bi sites in MnBi_{2}Te_{4}. The effects of site mixing should be considered in all layered heterostructures that consist of alternating magnetic and topological layers, including the entire family of MnTe(Bi_{2}Te_{3})_{n}, its Sb analogs, and their solid solution.Yaohua LiuLin-Lin WangQiang ZhengZengle HuangXiaoping WangMiaofang ChiYan WuBryan C. ChakoumakosMichael A. McGuireBrian C. SalesWeida WuJiaqiang YanAmerican Physical SocietyarticlePhysicsQC1-999ENPhysical Review X, Vol 11, Iss 2, p 021033 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Yaohua Liu Lin-Lin Wang Qiang Zheng Zengle Huang Xiaoping Wang Miaofang Chi Yan Wu Bryan C. Chakoumakos Michael A. McGuire Brian C. Sales Weida Wu Jiaqiang Yan Site Mixing for Engineering Magnetic Topological Insulators
description	The van der Waals compound, MnBi_{2}Te_{4}, is the first intrinsic magnetic topological insulator, providing a materials platform for exploring exotic quantum phenomena such as the axion insulator state and the quantum anomalous Hall effect. However, intrinsic structural imperfections lead to bulk conductivity, and the roles of magnetic defects are still unknown. With higher concentrations of the same types of magnetic defects, the isostructural compound MnSb_{2}Te_{4} is a better model system for a systematic investigation of the connections among magnetism, topology, and lattice defects. In this work, the impact of antisite defects on the magnetism and electronic structure is studied in MnSb_{2}Te_{4}. Mn-Sb site mixing leads to complex magnetic structures and tunes the interlayer magnetic coupling between antiferromagnetic and ferromagnetic. The detailed nonstoichiometry and site mixing of MnSb_{2}Te_{4} crystals depend on the growth parameters, which can lead to ≈40% of Mn sites occupied by Sb and ≈15% of Sb sites by Mn in as-grown crystals. Single-crystal neutron diffraction and electron microscopy studies show nearly random distribution of the antisite defects. Band structure calculations suggest that the Mn-Sb site mixing favors a ferromagnetic interlayer coupling, consistent with experimental observation, but is detrimental to the band inversion required for a nontrivial topology. Our results suggest a long-range magnetic order of Mn ions sitting on Bi sites in MnBi_{2}Te_{4}. The effects of site mixing should be considered in all layered heterostructures that consist of alternating magnetic and topological layers, including the entire family of MnTe(Bi_{2}Te_{3})_{n}, its Sb analogs, and their solid solution.
format	article
author	Yaohua Liu Lin-Lin Wang Qiang Zheng Zengle Huang Xiaoping Wang Miaofang Chi Yan Wu Bryan C. Chakoumakos Michael A. McGuire Brian C. Sales Weida Wu Jiaqiang Yan
author_facet	Yaohua Liu Lin-Lin Wang Qiang Zheng Zengle Huang Xiaoping Wang Miaofang Chi Yan Wu Bryan C. Chakoumakos Michael A. McGuire Brian C. Sales Weida Wu Jiaqiang Yan
author_sort	Yaohua Liu
title	Site Mixing for Engineering Magnetic Topological Insulators
title_short	Site Mixing for Engineering Magnetic Topological Insulators
title_full	Site Mixing for Engineering Magnetic Topological Insulators
title_fullStr	Site Mixing for Engineering Magnetic Topological Insulators
title_full_unstemmed	Site Mixing for Engineering Magnetic Topological Insulators
title_sort	site mixing for engineering magnetic topological insulators
publisher	American Physical Society
publishDate	2021
url	https://doaj.org/article/bd37acaef0d24d78b677b763a3d610d9
work_keys_str_mv	AT yaohualiu sitemixingforengineeringmagnetictopologicalinsulators AT linlinwang sitemixingforengineeringmagnetictopologicalinsulators AT qiangzheng sitemixingforengineeringmagnetictopologicalinsulators AT zenglehuang sitemixingforengineeringmagnetictopologicalinsulators AT xiaopingwang sitemixingforengineeringmagnetictopologicalinsulators AT miaofangchi sitemixingforengineeringmagnetictopologicalinsulators AT yanwu sitemixingforengineeringmagnetictopologicalinsulators AT bryancchakoumakos sitemixingforengineeringmagnetictopologicalinsulators AT michaelamcguire sitemixingforengineeringmagnetictopologicalinsulators AT briancsales sitemixingforengineeringmagnetictopologicalinsulators AT weidawu sitemixingforengineeringmagnetictopologicalinsulators AT jiaqiangyan sitemixingforengineeringmagnetictopologicalinsulators
_version_	1718389893657264128

Site Mixing for Engineering Magnetic Topological Insulators

Ejemplares similares