Investigation of the thermal tolerance of silicon-based lateral spin valves

Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si...

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Autores principales:	N. Yamashita, S. Lee, R. Ohshima, E. Shigematsu, H. Koike, Y. Suzuki, S. Miwa, M. Goto, Y. Ando, M. Shiraishi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/bd73c5c612c549a08cdb30909f2094f9
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spelling	oai:doaj.org-article:bd73c5c612c549a08cdb30909f2094f92021-12-02T15:53:01ZInvestigation of the thermal tolerance of silicon-based lateral spin valves10.1038/s41598-021-90114-92045-2322https://doaj.org/article/bd73c5c612c549a08cdb30909f2094f92021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-90114-9https://doaj.org/toc/2045-2322Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.N. YamashitaS. LeeR. OhshimaE. ShigematsuH. KoikeY. SuzukiS. MiwaM. GotoY. AndoM. ShiraishiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q N. Yamashita S. Lee R. Ohshima E. Shigematsu H. Koike Y. Suzuki S. Miwa M. Goto Y. Ando M. Shiraishi Investigation of the thermal tolerance of silicon-based lateral spin valves
description	Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.
format	article
author	N. Yamashita S. Lee R. Ohshima E. Shigematsu H. Koike Y. Suzuki S. Miwa M. Goto Y. Ando M. Shiraishi
author_facet	N. Yamashita S. Lee R. Ohshima E. Shigematsu H. Koike Y. Suzuki S. Miwa M. Goto Y. Ando M. Shiraishi
author_sort	N. Yamashita
title	Investigation of the thermal tolerance of silicon-based lateral spin valves
title_short	Investigation of the thermal tolerance of silicon-based lateral spin valves
title_full	Investigation of the thermal tolerance of silicon-based lateral spin valves
title_fullStr	Investigation of the thermal tolerance of silicon-based lateral spin valves
title_full_unstemmed	Investigation of the thermal tolerance of silicon-based lateral spin valves
title_sort	investigation of the thermal tolerance of silicon-based lateral spin valves
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/bd73c5c612c549a08cdb30909f2094f9
work_keys_str_mv	AT nyamashita investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT slee investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT rohshima investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT eshigematsu investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT hkoike investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT ysuzuki investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT smiwa investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT mgoto investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT yando investigationofthethermaltoleranceofsiliconbasedlateralspinvalves AT mshiraishi investigationofthethermaltoleranceofsiliconbasedlateralspinvalves
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Investigation of the thermal tolerance of silicon-based lateral spin valves

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