Investigation of the thermal tolerance of silicon-based lateral spin valves

Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si...

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Autores principales: N. Yamashita, S. Lee, R. Ohshima, E. Shigematsu, H. Koike, Y. Suzuki, S. Miwa, M. Goto, Y. Ando, M. Shiraishi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/bd73c5c612c549a08cdb30909f2094f9
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