Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning

Abstract We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, s...

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Autores principales:	See Wee Chee, Martin Kammler, Jeremy Graham, Lynne Gignac, Mark C. Reuter, Robert Hull, Frances M. Ross
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/bdafdc26d5ab435ca07088087c03dd7d
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spelling	oai:doaj.org-article:bdafdc26d5ab435ca07088087c03dd7d2021-12-02T15:08:15ZDirected Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning10.1038/s41598-018-27512-z2045-2322https://doaj.org/article/bdafdc26d5ab435ca07088087c03dd7d2018-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-27512-zhttps://doaj.org/toc/2045-2322Abstract We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates.See Wee CheeMartin KammlerJeremy GrahamLynne GignacMark C. ReuterRobert HullFrances M. RossNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q See Wee Chee Martin Kammler Jeremy Graham Lynne Gignac Mark C. Reuter Robert Hull Frances M. Ross Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
description	Abstract We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates.
format	article
author	See Wee Chee Martin Kammler Jeremy Graham Lynne Gignac Mark C. Reuter Robert Hull Frances M. Ross
author_facet	See Wee Chee Martin Kammler Jeremy Graham Lynne Gignac Mark C. Reuter Robert Hull Frances M. Ross
author_sort	See Wee Chee
title	Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
title_short	Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
title_full	Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
title_fullStr	Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
title_full_unstemmed	Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
title_sort	directed self-assembly of ge quantum dots using focused si2+ ion beam patterning
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/bdafdc26d5ab435ca07088087c03dd7d
work_keys_str_mv	AT seeweechee directedselfassemblyofgequantumdotsusingfocusedsi2ionbeampatterning AT martinkammler directedselfassemblyofgequantumdotsusingfocusedsi2ionbeampatterning AT jeremygraham directedselfassemblyofgequantumdotsusingfocusedsi2ionbeampatterning AT lynnegignac directedselfassemblyofgequantumdotsusingfocusedsi2ionbeampatterning AT markcreuter directedselfassemblyofgequantumdotsusingfocusedsi2ionbeampatterning AT roberthull directedselfassemblyofgequantumdotsusingfocusedsi2ionbeampatterning AT francesmross directedselfassemblyofgequantumdotsusingfocusedsi2ionbeampatterning
_version_	1718388209772134400

Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning

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