Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning

Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning

Abstract We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, s...

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Autores principales: See Wee Chee, Martin Kammler, Jeremy Graham, Lynne Gignac, Mark C. Reuter, Robert Hull, Frances M. Ross
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/bdafdc26d5ab435ca07088087c03dd7d
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