Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4

Abstract In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi1−xSbx)2Se3/CoFe2O4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresis...

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Autores principales:	Shun-Yu Huang, Cheong-Wei Chong, Yi Tung, Tzu-Chin Chen, Ki-Chi Wu, Min-Kai Lee, Jung-Chun-Andrew Huang, Z. Li, H. Qiu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/bdc70b5e19184bc7a16a1f00dafed58c
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spelling	oai:doaj.org-article:bdc70b5e19184bc7a16a1f00dafed58c2021-12-02T15:06:14ZProximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O410.1038/s41598-017-02662-82045-2322https://doaj.org/article/bdc70b5e19184bc7a16a1f00dafed58c2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02662-8https://doaj.org/toc/2045-2322Abstract In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi1−xSbx)2Se3/CoFe2O4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi1−xSbx)2Se3/CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9 T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi1−xSbx)2Se3 and the heterostructures are promising for TI-based spintronic device applications.Shun-Yu HuangCheong-Wei ChongYi TungTzu-Chin ChenKi-Chi WuMin-Kai LeeJung-Chun-Andrew HuangZ. LiH. QiuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shun-Yu Huang Cheong-Wei Chong Yi Tung Tzu-Chin Chen Ki-Chi Wu Min-Kai Lee Jung-Chun-Andrew Huang Z. Li H. Qiu Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4
description	Abstract In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi1−xSbx)2Se3/CoFe2O4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi1−xSbx)2Se3/CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9 T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi1−xSbx)2Se3 and the heterostructures are promising for TI-based spintronic device applications.
format	article
author	Shun-Yu Huang Cheong-Wei Chong Yi Tung Tzu-Chin Chen Ki-Chi Wu Min-Kai Lee Jung-Chun-Andrew Huang Z. Li H. Qiu
author_facet	Shun-Yu Huang Cheong-Wei Chong Yi Tung Tzu-Chin Chen Ki-Chi Wu Min-Kai Lee Jung-Chun-Andrew Huang Z. Li H. Qiu
author_sort	Shun-Yu Huang
title	Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4
title_short	Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4
title_full	Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4
title_fullStr	Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4
title_full_unstemmed	Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4
title_sort	proximity effect induced transport properties between mbe grown (bi1−xsbx)2se3 topological insulators and magnetic insulator cofe2o4
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/bdc70b5e19184bc7a16a1f00dafed58c
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Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4

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