Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge

Abstract Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary...

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Autores principales:	Christiane Ader, Andreas Falkenstein, Manfred Martin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/bdd3e46fdcc148b8a7f7914012af657f
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spelling	oai:doaj.org-article:bdd3e46fdcc148b8a7f7914012af657f2021-12-02T18:30:57ZTransition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge10.1038/s41598-021-93777-62045-2322https://doaj.org/article/bdd3e46fdcc148b8a7f7914012af657f2021-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-93777-6https://doaj.org/toc/2045-2322Abstract Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary oxides. Bulk switching was found experimentally in different oxides, for example in amorphous gallium oxide. The forms of the observed current–voltage curves differ, however, fundamentally. Even within the same material, both abnormal bipolar and normal bipolar resistive switching were found. Here, we use a new drift–diffusion model to theoretically investigate bulk switching in amorphous oxides where the electronic conductivity can be described by Mott’s concept of a mobility edge. We show not only that a strong, non-linear dependence of the electronic conductivity on the oxygen content is necessary for bulk switching but also that changing the geometry of the memristive device causes the transition between abnormal and normal bipolar switching.Christiane AderAndreas FalkensteinManfred MartinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Christiane Ader Andreas Falkenstein Manfred Martin Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
description	Abstract Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary oxides. Bulk switching was found experimentally in different oxides, for example in amorphous gallium oxide. The forms of the observed current–voltage curves differ, however, fundamentally. Even within the same material, both abnormal bipolar and normal bipolar resistive switching were found. Here, we use a new drift–diffusion model to theoretically investigate bulk switching in amorphous oxides where the electronic conductivity can be described by Mott’s concept of a mobility edge. We show not only that a strong, non-linear dependence of the electronic conductivity on the oxygen content is necessary for bulk switching but also that changing the geometry of the memristive device causes the transition between abnormal and normal bipolar switching.
format	article
author	Christiane Ader Andreas Falkenstein Manfred Martin
author_facet	Christiane Ader Andreas Falkenstein Manfred Martin
author_sort	Christiane Ader
title	Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
title_short	Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
title_full	Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
title_fullStr	Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
title_full_unstemmed	Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
title_sort	transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/bdd3e46fdcc148b8a7f7914012af657f
work_keys_str_mv	AT christianeader transitionbetweenbipolarandabnormalbipolarresistiveswitchinginamorphousoxideswithamobilityedge AT andreasfalkenstein transitionbetweenbipolarandabnormalbipolarresistiveswitchinginamorphousoxideswithamobilityedge AT manfredmartin transitionbetweenbipolarandabnormalbipolarresistiveswitchinginamorphousoxideswithamobilityedge
_version_	1718378003879165952

Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge

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