Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.

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Autores principales:	Christoph Baeumer, Christoph Schmitz, Astrid Marchewka, David N. Mueller, Richard Valenta, Johanna Hackl, Nicolas Raab, Steven P. Rogers, M. Imtiaz Khan, Slavomir Nemsak, Moonsub Shim, Stephan Menzel, Claus Michael Schneider, Rainer Waser, Regina Dittmann
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/bf6c3f4cacb943e7929d9dfd86966d52
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spelling	oai:doaj.org-article:bf6c3f4cacb943e7929d9dfd86966d522021-12-02T17:31:19ZQuantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes10.1038/ncomms123982041-1723https://doaj.org/article/bf6c3f4cacb943e7929d9dfd86966d522016-08-01T00:00:00Zhttps://doi.org/10.1038/ncomms12398https://doaj.org/toc/2041-1723Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.Christoph BaeumerChristoph SchmitzAstrid MarchewkaDavid N. MuellerRichard ValentaJohanna HacklNicolas RaabSteven P. RogersM. Imtiaz KhanSlavomir NemsakMoonsub ShimStephan MenzelClaus Michael SchneiderRainer WaserRegina DittmannNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Christoph Baeumer Christoph Schmitz Astrid Marchewka David N. Mueller Richard Valenta Johanna Hackl Nicolas Raab Steven P. Rogers M. Imtiaz Khan Slavomir Nemsak Moonsub Shim Stephan Menzel Claus Michael Schneider Rainer Waser Regina Dittmann Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
description	Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.
format	article
author	Christoph Baeumer Christoph Schmitz Astrid Marchewka David N. Mueller Richard Valenta Johanna Hackl Nicolas Raab Steven P. Rogers M. Imtiaz Khan Slavomir Nemsak Moonsub Shim Stephan Menzel Claus Michael Schneider Rainer Waser Regina Dittmann
author_facet	Christoph Baeumer Christoph Schmitz Astrid Marchewka David N. Mueller Richard Valenta Johanna Hackl Nicolas Raab Steven P. Rogers M. Imtiaz Khan Slavomir Nemsak Moonsub Shim Stephan Menzel Claus Michael Schneider Rainer Waser Regina Dittmann
author_sort	Christoph Baeumer
title	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_short	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_full	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_fullStr	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_full_unstemmed	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_sort	quantifying redox-induced schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/bf6c3f4cacb943e7929d9dfd86966d52
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Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

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