Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.
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| Autores principales: | , , , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/bf6c3f4cacb943e7929d9dfd86966d52 |
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