The band-edge excitons observed in few-layer NiPS3

Abstract Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS3) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300 K. Prominent μTR features of the A exciton series and B are simultaneously detected near the band edge of NiPS3. The A exciton se...

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Autores principales:	Ching-Hwa Ho, Tien-Yao Hsu, Luthviyah Choirotul Muhimmah
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/bfcce096671041cfb213c7a7b52d021a
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spelling	oai:doaj.org-article:bfcce096671041cfb213c7a7b52d021a2021-12-02T13:49:54ZThe band-edge excitons observed in few-layer NiPS310.1038/s41699-020-00188-82397-7132https://doaj.org/article/bfcce096671041cfb213c7a7b52d021a2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00188-8https://doaj.org/toc/2397-7132Abstract Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS3) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300 K. Prominent μTR features of the A exciton series and B are simultaneously detected near the band edge of NiPS3. The A exciton series contains two sharp A 1 and A 2 levels and one threshold-energy-related transition (direct gap, E ∞), which are simultaneously detected at the lower energy side of NiPS3. In addition, one broadened B feature is present at the higher energy side of few-layer NiPS3. The A series excitons may correlate with majorly d-to-d transition in the Rydberg series with threshold energy of E ∞ ≅ 1.511 eV at 10 K. The binding energy of A1 is about 36 meV, and the transition energy is A 1 ≅ 1.366 eV at 300 K. The transition energy of B measured by μTR is about 1.894 eV at 10 K. The excitonic series A may directly transit from the top of valence band to the conduction band of NiPS3, while the B feature might originate from the spin-split-off valence band to the conduction band edge. The direct optical gap of NiPS3 is ~1.402 eV at 300 K, which is confirmed by μTR and transmittance experiments.Ching-Hwa HoTien-Yao HsuLuthviyah Choirotul MuhimmahNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Ching-Hwa Ho Tien-Yao Hsu Luthviyah Choirotul Muhimmah The band-edge excitons observed in few-layer NiPS3
description	Abstract Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS3) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300 K. Prominent μTR features of the A exciton series and B are simultaneously detected near the band edge of NiPS3. The A exciton series contains two sharp A 1 and A 2 levels and one threshold-energy-related transition (direct gap, E ∞), which are simultaneously detected at the lower energy side of NiPS3. In addition, one broadened B feature is present at the higher energy side of few-layer NiPS3. The A series excitons may correlate with majorly d-to-d transition in the Rydberg series with threshold energy of E ∞ ≅ 1.511 eV at 10 K. The binding energy of A1 is about 36 meV, and the transition energy is A 1 ≅ 1.366 eV at 300 K. The transition energy of B measured by μTR is about 1.894 eV at 10 K. The excitonic series A may directly transit from the top of valence band to the conduction band of NiPS3, while the B feature might originate from the spin-split-off valence band to the conduction band edge. The direct optical gap of NiPS3 is ~1.402 eV at 300 K, which is confirmed by μTR and transmittance experiments.
format	article
author	Ching-Hwa Ho Tien-Yao Hsu Luthviyah Choirotul Muhimmah
author_facet	Ching-Hwa Ho Tien-Yao Hsu Luthviyah Choirotul Muhimmah
author_sort	Ching-Hwa Ho
title	The band-edge excitons observed in few-layer NiPS3
title_short	The band-edge excitons observed in few-layer NiPS3
title_full	The band-edge excitons observed in few-layer NiPS3
title_fullStr	The band-edge excitons observed in few-layer NiPS3
title_full_unstemmed	The band-edge excitons observed in few-layer NiPS3
title_sort	band-edge excitons observed in few-layer nips3
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/bfcce096671041cfb213c7a7b52d021a
work_keys_str_mv	AT chinghwaho thebandedgeexcitonsobservedinfewlayernips3 AT tienyaohsu thebandedgeexcitonsobservedinfewlayernips3 AT luthviyahchoirotulmuhimmah thebandedgeexcitonsobservedinfewlayernips3 AT chinghwaho bandedgeexcitonsobservedinfewlayernips3 AT tienyaohsu bandedgeexcitonsobservedinfewlayernips3 AT luthviyahchoirotulmuhimmah bandedgeexcitonsobservedinfewlayernips3
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The band-edge excitons observed in few-layer NiPS3

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