Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth
In the vision-based shape control system of silicon single crystal (SSC) growth, shape parameters are used as the control variables to make the grown SSC approximate to a perfect cylinder. A highlight halo at the junction of the solid crystal and the liquid crysta is a distinctive feature that refle...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c09fc3e15d2d4521b6b6c2cd194ae970 |
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| Sumario: | In the vision-based shape control system of silicon single crystal (SSC) growth, shape parameters are used as the control variables to make the grown SSC approximate to a perfect cylinder. A highlight halo at the junction of the solid crystal and the liquid crysta is a distinctive feature that reflects the current shape of SSC, and the edge of the captured halo is an elliptic arc that consistently changes with the shape of the halo. To estimate the shape parameters through the elliptic arc, we propose a two-side (TS) constraint method to fit the elliptic arc. Firstly, the error correction parameter is introduced into the second-order polynomial model to make the model more robust in the case of noise disturbing, and the resultant non-convex TS constraint model is constructed. Then, two weighted functions, which give the data out of TS constraint a small weight coefficient to resist the large level noise disturbing, are brought into the TS constraint optimization problem tactfully. Simulation and real SSC data examples show that the proposed method can obtain the elliptic arc parameters effectively. |
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