Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth

In the vision-based shape control system of silicon single crystal (SSC) growth, shape parameters are used as the control variables to make the grown SSC approximate to a perfect cylinder. A highlight halo at the junction of the solid crystal and the liquid crysta is a distinctive feature that refle...

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Autores principales:	Pengliang Li, Ding Liu
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2020
Materias:	Silicon single crystal elliptic arc fitting two-side constraint non-convex optimization Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/c09fc3e15d2d4521b6b6c2cd194ae970
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id	oai:doaj.org-article:c09fc3e15d2d4521b6b6c2cd194ae970
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spelling	oai:doaj.org-article:c09fc3e15d2d4521b6b6c2cd194ae9702021-11-11T00:01:11ZElliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth2169-353610.1109/ACCESS.2020.2972612https://doaj.org/article/c09fc3e15d2d4521b6b6c2cd194ae9702020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8988234/https://doaj.org/toc/2169-3536In the vision-based shape control system of silicon single crystal (SSC) growth, shape parameters are used as the control variables to make the grown SSC approximate to a perfect cylinder. A highlight halo at the junction of the solid crystal and the liquid crysta is a distinctive feature that reflects the current shape of SSC, and the edge of the captured halo is an elliptic arc that consistently changes with the shape of the halo. To estimate the shape parameters through the elliptic arc, we propose a two-side (TS) constraint method to fit the elliptic arc. Firstly, the error correction parameter is introduced into the second-order polynomial model to make the model more robust in the case of noise disturbing, and the resultant non-convex TS constraint model is constructed. Then, two weighted functions, which give the data out of TS constraint a small weight coefficient to resist the large level noise disturbing, are brought into the TS constraint optimization problem tactfully. Simulation and real SSC data examples show that the proposed method can obtain the elliptic arc parameters effectively.Pengliang LiDing LiuIEEEarticleSilicon single crystalelliptic arc fittingtwo-side constraintnon-convex optimizationElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Access, Vol 8, Pp 28979-28987 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Silicon single crystal elliptic arc fitting two-side constraint non-convex optimization Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Silicon single crystal elliptic arc fitting two-side constraint non-convex optimization Electrical engineering. Electronics. Nuclear engineering TK1-9971 Pengliang Li Ding Liu Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth
description	In the vision-based shape control system of silicon single crystal (SSC) growth, shape parameters are used as the control variables to make the grown SSC approximate to a perfect cylinder. A highlight halo at the junction of the solid crystal and the liquid crysta is a distinctive feature that reflects the current shape of SSC, and the edge of the captured halo is an elliptic arc that consistently changes with the shape of the halo. To estimate the shape parameters through the elliptic arc, we propose a two-side (TS) constraint method to fit the elliptic arc. Firstly, the error correction parameter is introduced into the second-order polynomial model to make the model more robust in the case of noise disturbing, and the resultant non-convex TS constraint model is constructed. Then, two weighted functions, which give the data out of TS constraint a small weight coefficient to resist the large level noise disturbing, are brought into the TS constraint optimization problem tactfully. Simulation and real SSC data examples show that the proposed method can obtain the elliptic arc parameters effectively.
format	article
author	Pengliang Li Ding Liu
author_facet	Pengliang Li Ding Liu
author_sort	Pengliang Li
title	Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth
title_short	Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth
title_full	Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth
title_fullStr	Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth
title_full_unstemmed	Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth
title_sort	elliptic arc fitting for the shape control system of silicon single crystal growth
publisher	IEEE
publishDate	2020
url	https://doaj.org/article/c09fc3e15d2d4521b6b6c2cd194ae970
work_keys_str_mv	AT pengliangli ellipticarcfittingfortheshapecontrolsystemofsiliconsinglecrystalgrowth AT dingliu ellipticarcfittingfortheshapecontrolsystemofsiliconsinglecrystalgrowth
_version_	1718439623530643456

Elliptic Arc Fitting for the Shape Control System of Silicon Single Crystal Growth

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