Gas sensing characterization of tellurium thin films by the kelvin probe technique

The sensing behavior of tellurium films at room temperature was tested with environmental pollutant gases, such as NO2, CO, O3, and water vapor, using the Kelvin probe technique. A significant sensitivity was observed for nitrogen dioxide. The detection range for NO2 was between 0.5–5.0 ppm in air w...

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Autores principales:	Ţiuleanu, Dumitru, Marian, Svetlana, Mocreac, Olga
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/c16ee5f4cf8c4ad08fd7e68ed194c513
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spelling	oai:doaj.org-article:c16ee5f4cf8c4ad08fd7e68ed194c5132021-11-21T12:01:24ZGas sensing characterization of tellurium thin films by the kelvin probe technique2537-63651810-648Xhttps://doaj.org/article/c16ee5f4cf8c4ad08fd7e68ed194c5132012-10-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/21325https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The sensing behavior of tellurium films at room temperature was tested with environmental pollutant gases, such as NO2, CO, O3, and water vapor, using the Kelvin probe technique. A significant sensitivity was observed for nitrogen dioxide. The detection range for NO2 was between 0.5–5.0 ppm in air with controlled humidity. The response and the recovery time are rapid with good reproducibility and high sensibility. The work function measurements showed that chalcogenide semiconductors in question are well-suited materials for the detection of not only small concentrations of NO2, but also for humidity sensing. The relative humidity of 45% induces the work function change Δфof approximately 200 mV at room temperature. It is shown that the “strong” chemisorption of nitrogen dioxide results in an increase in both work function change Δф> 0 and electrical conductivity Δɕ > 0 because of the additional charging of the surface and band bending. The effect of water vapor is due to a simple physical adsorption of polar water molecules oriented perpendicular to the surface with a negative pole inward. As a result, the dipole component of the work function increases, i.e., Δф> 0, but the free lattice holes become more localized at the surface and the conductivity of the p-type chalcogenide layer decreases Δɕ Ţiuleanu, DumitruMarian, SvetlanaMocreac, OlgaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 3, Pp 264-271 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Ţiuleanu, Dumitru Marian, Svetlana Mocreac, Olga Gas sensing characterization of tellurium thin films by the kelvin probe technique
description	The sensing behavior of tellurium films at room temperature was tested with environmental pollutant gases, such as NO2, CO, O3, and water vapor, using the Kelvin probe technique. A significant sensitivity was observed for nitrogen dioxide. The detection range for NO2 was between 0.5–5.0 ppm in air with controlled humidity. The response and the recovery time are rapid with good reproducibility and high sensibility. The work function measurements showed that chalcogenide semiconductors in question are well-suited materials for the detection of not only small concentrations of NO2, but also for humidity sensing. The relative humidity of 45% induces the work function change Δфof approximately 200 mV at room temperature. It is shown that the “strong” chemisorption of nitrogen dioxide results in an increase in both work function change Δф> 0 and electrical conductivity Δɕ > 0 because of the additional charging of the surface and band bending. The effect of water vapor is due to a simple physical adsorption of polar water molecules oriented perpendicular to the surface with a negative pole inward. As a result, the dipole component of the work function increases, i.e., Δф> 0, but the free lattice holes become more localized at the surface and the conductivity of the p-type chalcogenide layer decreases Δɕ
format	article
author	Ţiuleanu, Dumitru Marian, Svetlana Mocreac, Olga
author_facet	Ţiuleanu, Dumitru Marian, Svetlana Mocreac, Olga
author_sort	Ţiuleanu, Dumitru
title	Gas sensing characterization of tellurium thin films by the kelvin probe technique
title_short	Gas sensing characterization of tellurium thin films by the kelvin probe technique
title_full	Gas sensing characterization of tellurium thin films by the kelvin probe technique
title_fullStr	Gas sensing characterization of tellurium thin films by the kelvin probe technique
title_full_unstemmed	Gas sensing characterization of tellurium thin films by the kelvin probe technique
title_sort	gas sensing characterization of tellurium thin films by the kelvin probe technique
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/c16ee5f4cf8c4ad08fd7e68ed194c513
work_keys_str_mv	AT tiuleanudumitru gassensingcharacterizationoftelluriumthinfilmsbythekelvinprobetechnique AT mariansvetlana gassensingcharacterizationoftelluriumthinfilmsbythekelvinprobetechnique AT mocreacolga gassensingcharacterizationoftelluriumthinfilmsbythekelvinprobetechnique
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Gas sensing characterization of tellurium thin films by the kelvin probe technique

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