Dispersion of ZnSe quantum dots in KBr matrix

In this work we present some results concerning the growth and the structural and opti- cal characterizations of ZnSe nanocrystals dispersed in KBr matrix. The growth of the samples was carried out by the Czochralski method and the incorporation of the ZnSe semiconductor nanocrystallites was real...

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Autores principales:	Aksas, A., Chelouche, A., Djouadi, D., Boudine, B., Halimi, O.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/c1a76941321340248c432a8a3afaa5b8
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spelling	oai:doaj.org-article:c1a76941321340248c432a8a3afaa5b82021-11-21T12:06:55ZDispersion of ZnSe quantum dots in KBr matrix2537-63651810-648Xhttps://doaj.org/article/c1a76941321340248c432a8a3afaa5b82008-04-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3793https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In this work we present some results concerning the growth and the structural and opti- cal characterizations of ZnSe nanocrystals dispersed in KBr matrix. The growth of the samples was carried out by the Czochralski method and the incorporation of the ZnSe semiconductor nanocrystallites was realised in the liquid phase of the matrix. The introduction of ZnSe crystallites into the matrix was revealed by the X-ray diffraction. The UV-visible optical absorption measurement showed a displacement of the absorption threshold of the sample towards high energies (short wavelengths) as compared to the ZnSe bulk crystal one. This shift is due to the quantum confinement effect induced by size reduction. Aksas, A.Chelouche, A.Djouadi, D.Boudine, B.Halimi, O.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 2, Pp 140-144 (2008)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Aksas, A. Chelouche, A. Djouadi, D. Boudine, B. Halimi, O. Dispersion of ZnSe quantum dots in KBr matrix
description	In this work we present some results concerning the growth and the structural and opti- cal characterizations of ZnSe nanocrystals dispersed in KBr matrix. The growth of the samples was carried out by the Czochralski method and the incorporation of the ZnSe semiconductor nanocrystallites was realised in the liquid phase of the matrix. The introduction of ZnSe crystallites into the matrix was revealed by the X-ray diffraction. The UV-visible optical absorption measurement showed a displacement of the absorption threshold of the sample towards high energies (short wavelengths) as compared to the ZnSe bulk crystal one. This shift is due to the quantum confinement effect induced by size reduction.
format	article
author	Aksas, A. Chelouche, A. Djouadi, D. Boudine, B. Halimi, O.
author_facet	Aksas, A. Chelouche, A. Djouadi, D. Boudine, B. Halimi, O.
author_sort	Aksas, A.
title	Dispersion of ZnSe quantum dots in KBr matrix
title_short	Dispersion of ZnSe quantum dots in KBr matrix
title_full	Dispersion of ZnSe quantum dots in KBr matrix
title_fullStr	Dispersion of ZnSe quantum dots in KBr matrix
title_full_unstemmed	Dispersion of ZnSe quantum dots in KBr matrix
title_sort	dispersion of znse quantum dots in kbr matrix
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2008
url	https://doaj.org/article/c1a76941321340248c432a8a3afaa5b8
work_keys_str_mv	AT aksasa dispersionofznsequantumdotsinkbrmatrix AT chelouchea dispersionofznsequantumdotsinkbrmatrix AT djouadid dispersionofznsequantumdotsinkbrmatrix AT boudineb dispersionofznsequantumdotsinkbrmatrix AT halimio dispersionofznsequantumdotsinkbrmatrix
_version_	1718419210681450496

Dispersion of ZnSe quantum dots in KBr matrix

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