Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy

Abstract Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the partial pressures of the individual consti...

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Autores principales: Aykut Baki, Julian Stöver, Tobias Schulz, Toni Markurt, Houari Amari, Carsten Richter, Jens Martin, Klaus Irmscher, Martin Albrecht, Jutta Schwarzkopf
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Publicado: Nature Portfolio 2021
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spelling oai:doaj.org-article:c1f1abe782684040a7759165e8af97202021-12-02T14:17:27ZInfluence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy10.1038/s41598-021-87007-22045-2322https://doaj.org/article/c1f1abe782684040a7759165e8af97202021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87007-2https://doaj.org/toc/2045-2322Abstract Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the partial pressures of the individual constituents independently, we tuned the Sr/Ti ratio of the gas phase for realizing, stoichiometric, as well as Sr deficient layers. Quantitative energy dispersive X-ray spectroscopy in a scanning transmission electron microscope confirm Sr deficiency of up to 20% in nominally off-stoichiometrically grown films. Our MOVPE process allows to grow such layers in phase pure state and without extended defect formation. Indications for oxygen deficiency could not be identified. Sr deficient layers exhibit an increased permittivity of ɛ r  = 202 and a larger vertical lattice parameter. Current–voltage characteristics (IVCs) of metal–oxide–semiconductor (Pt/SrTiO3/SrTiO3:Nb) structures reveal that Sr deficient SrTiO3 films show an intrinsic resistive switching with on–off ratios of three orders of magnitude at RT and seven orders of magnitude at 10 K. There is strong evidence that a large deviation from stoichiometry pronounces the resistive switching behavior. IVCs conducted at 10 K indicate a defect-based mechanism instead of mass transport by ion diffusion. This is supported by in-situ STEM investigations that show filaments to form at significant higher voltages than those were resistive switching is observed in our samples.Aykut BakiJulian StöverTobias SchulzToni MarkurtHouari AmariCarsten RichterJens MartinKlaus IrmscherMartin AlbrechtJutta SchwarzkopfNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Aykut Baki
Julian Stöver
Tobias Schulz
Toni Markurt
Houari Amari
Carsten Richter
Jens Martin
Klaus Irmscher
Martin Albrecht
Jutta Schwarzkopf
Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy
description Abstract Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the partial pressures of the individual constituents independently, we tuned the Sr/Ti ratio of the gas phase for realizing, stoichiometric, as well as Sr deficient layers. Quantitative energy dispersive X-ray spectroscopy in a scanning transmission electron microscope confirm Sr deficiency of up to 20% in nominally off-stoichiometrically grown films. Our MOVPE process allows to grow such layers in phase pure state and without extended defect formation. Indications for oxygen deficiency could not be identified. Sr deficient layers exhibit an increased permittivity of ɛ r  = 202 and a larger vertical lattice parameter. Current–voltage characteristics (IVCs) of metal–oxide–semiconductor (Pt/SrTiO3/SrTiO3:Nb) structures reveal that Sr deficient SrTiO3 films show an intrinsic resistive switching with on–off ratios of three orders of magnitude at RT and seven orders of magnitude at 10 K. There is strong evidence that a large deviation from stoichiometry pronounces the resistive switching behavior. IVCs conducted at 10 K indicate a defect-based mechanism instead of mass transport by ion diffusion. This is supported by in-situ STEM investigations that show filaments to form at significant higher voltages than those were resistive switching is observed in our samples.
format article
author Aykut Baki
Julian Stöver
Tobias Schulz
Toni Markurt
Houari Amari
Carsten Richter
Jens Martin
Klaus Irmscher
Martin Albrecht
Jutta Schwarzkopf
author_facet Aykut Baki
Julian Stöver
Tobias Schulz
Toni Markurt
Houari Amari
Carsten Richter
Jens Martin
Klaus Irmscher
Martin Albrecht
Jutta Schwarzkopf
author_sort Aykut Baki
title Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy
title_short Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy
title_full Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy
title_fullStr Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy
title_full_unstemmed Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy
title_sort influence of sr deficiency on structural and electrical properties of srtio3 thin films grown by metal–organic vapor phase epitaxy
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/c1f1abe782684040a7759165e8af9720
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