Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. B...

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Autores principales:	Ju-Hung Chen, Sheng-Kuei Chiu, Jin-De Luo, Shu-Yu Huang, Hsiang-An Ting, Mario Hofmann, Ya-Ping Hsieh, Chu-Chi Ting
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/c2170220d4b54666a5f2e8becd189d46
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spelling	oai:doaj.org-article:c2170220d4b54666a5f2e8becd189d462021-12-02T19:12:28ZRobust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap10.1038/s41598-020-70879-12045-2322https://doaj.org/article/c2170220d4b54666a5f2e8becd189d462020-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-70879-1https://doaj.org/toc/2045-2322Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).Ju-Hung ChenSheng-Kuei ChiuJin-De LuoShu-Yu HuangHsiang-An TingMario HofmannYa-Ping HsiehChu-Chi TingNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ju-Hung Chen Sheng-Kuei Chiu Jin-De Luo Shu-Yu Huang Hsiang-An Ting Mario Hofmann Ya-Ping Hsieh Chu-Chi Ting Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
description	Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).
format	article
author	Ju-Hung Chen Sheng-Kuei Chiu Jin-De Luo Shu-Yu Huang Hsiang-An Ting Mario Hofmann Ya-Ping Hsieh Chu-Chi Ting
author_facet	Ju-Hung Chen Sheng-Kuei Chiu Jin-De Luo Shu-Yu Huang Hsiang-An Ting Mario Hofmann Ya-Ping Hsieh Chu-Chi Ting
author_sort	Ju-Hung Chen
title	Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
title_short	Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
title_full	Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
title_fullStr	Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
title_full_unstemmed	Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
title_sort	robust formation of amorphous sb2s3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/c2170220d4b54666a5f2e8becd189d46
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Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

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