Influence of rest on mechanical properties of GaP single crystals deformed by scleroscopic method at different temperatures
The areas of the GaP (111) plane placed between the scratches parallel to [110] have been investigated. The deformation degree of these areas was varied by distance between scratches (60-180 µm) and scratching temperature (T = 20, 150, and 450°C). It was obtained that the microhardness value (H)...
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Formato: | article |
Lenguaje: | EN |
Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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Materias: | |
Acceso en línea: | https://doaj.org/article/c25af114dcc74cd1acd6a058d8b32b89 |
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Sumario: | The areas of the GaP (111) plane placed between the scratches parallel to [110] have
been investigated. The deformation degree of these areas was varied by distance between
scratches (60-180 µm) and scratching temperature (T = 20, 150, and 450°C). It was obtained
that the microhardness value (H) is smaller and the acoustic emission (AE) is more intensive
for the areas with higher stress state. It was established that rest (~500 h) resulted in the AE
significant increase for complete cycle of microindentation and emission in unloading. It was
shown that the active formation of cracks and, especially, a material break off around the indents under microindentation of the investigated GaP zones have been observed while the AE
increase; however, the H value in this case changed weakly. Obviously, after rest the revealed
deformation acts differently influence the AE and microhardness changes. The essential
changes of the relaxation coefficient (K) dependence on deformation degree as a result of rest
have been revealed: K linearly increases with deformation degree increase before rest and
monotonically decreases after rest.
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