Analysis of High-Failure Mechanism Based on Gate-Controlled Device for Electro-Static Discharge Protection
As semiconductor process continues to advance, the miniaturization of feature sizes places higher demands on high-failure electro-static discharge (ESD) applications. This article explores the connection between the physical structure of a device-level silicon controlled rectifier (SCR) and high-fai...
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| Main Authors: | , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2020
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| Subjects: | |
| Online Access: | https://doaj.org/article/c25fca2cf82d4c759b04bbbec80ebe52 |
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