Sub-thermionic, ultra-high-gain organic transistors and circuits

Sub-thermionic, ultra-high-gain organic transistors and circuits

Exploiting negative capacitance effects in organic thin-film transistors (OTFTs) is advantageous for enhancing device performance. Here, the authors report solution-processed sub-thermionic OTFTs and circuits with ferroelectric hafnium oxides that show ultra-low power and ultra-high gain.

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Detalles Bibliográficos
Autores principales: Zhongzhong Luo, Boyu Peng, Junpeng Zeng, Zhihao Yu, Ying Zhao, Jun Xie, Rongfang Lan, Zhong Ma, Lijia Pan, Ke Cao, Yang Lu, Daowei He, Hongkai Ning, Wanqing Meng, Yang Yang, Xiaoqing Chen, Weisheng Li, Jiawei Wang, Danfeng Pan, Xuecou Tu, Wenxing Huo, Xian Huang, Dongquan Shi, Ling Li, Ming Liu, Yi Shi, Xue Feng, Paddy K. L. Chan, Xinran Wang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/c28cfc85934841b4bb20c0a57d71d439
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Sumario:Exploiting negative capacitance effects in organic thin-film transistors (OTFTs) is advantageous for enhancing device performance. Here, the authors report solution-processed sub-thermionic OTFTs and circuits with ferroelectric hafnium oxides that show ultra-low power and ultra-high gain.

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